Hybrid plasmon/dielectric waveguide for integrated silicon-on-insulator optical elements

• Published in: Optics express 2010-09, Vol.18 (20), p.21013-21023
• Main Authors: Flammer, P D, Banks, J M, Furtak, T E, Durfee, C G, Hollingsworth, R E, Collins, R T
• Format: Article
• Language: English
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/OE.18.021013

VLSI compatible optical waveguides on silicon are currently of particular interest in order to integrate optical elements onto silicon chips, and for possible replacements of electrical cross-chip/inter-core interconnects. Here we present simulation and experimental verification of a hybrid plasmon/dielectric, single-mode, single-polarization waveguide for silicon-on-insulator wafers. Its fabrication is compatible with VLSI processing techniques, and it possesses desirable properties such as the absence of birefringence and low sensitivity to surface roughness and metallic losses. The waveguide structure naturally forms an MOS capacitor, possibly useful for active device integration. Simulations predict very long propagation lengths of millimeter scale with micron scale confinement, or sub-micron scale confinement with propagation lengths still in excess of 100 microns. The waveguide may be tuned continuously between these states using standard VLSI processing. Extremely long propagation lengths have been simulated: one configuration presented here has a simulated propagation length of 34 cm.