Processing and characterization of B4C-SiC-Si-TiB2 composites

B4C-SiC-Si-TiB2 composites were synthesised by a two-step process. TiB2 particles in the size range 2-5 micron were generated in situ in the first step and were distributed in the residual silicon present in the reaction bonded boron carbide in the second step. The composites were characterised by X...

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Bibliographic Details
Published in:Materials science & engineering. A, Structural materials : properties, microstructure and processing Structural materials : properties, microstructure and processing, 2010-06, Vol.527 (16-17), p.4109-4112
Main Authors: PATEL, Manish, SUBRAHMANYAM, J, BHANU PRASAD, V. V, GOYAL, Rajnish
Format: Article
Language:English
Subjects:
Bonding
Boron carbide
Cross-disciplinary physics: materials science
rheology
Density
Diffraction
Exact sciences and technology
Hardness
Materials science
Materials synthesis
materials processing
Microstructure
Particulate composites
Physics
Reinforcement
Scanning electron microscopy
Titanium diboride
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Summary:B4C-SiC-Si-TiB2 composites were synthesised by a two-step process. TiB2 particles in the size range 2-5 micron were generated in situ in the first step and were distributed in the residual silicon present in the reaction bonded boron carbide in the second step. The composites were characterised by XRD, SEM, EPMA and micro-hardness testing. The density and average hardness of the siliconised boron carbide samples with and without TiB2 particle reinforcement were 2.67 g/cm3 and 25 GPa and 2.54 g/cm3 and 21 GPa, respectively.
ISSN:0921-5093
1873-4936
DOI:10.1016/j.msea.2010.03.020