Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells

Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. T...

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Bibliographic Details
Published in:Thin solid films 2010-05, Vol.518 (15), p.4399-4402
Main Authors: Sato, Taketomo, Yoshizawa, Naoki, Hashizume, Tamotsu
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Energy
Exact sciences and technology
Indium phosphide
Indium phosphides
Materials science
Nanocomposites
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Natural energy
Other semiconductors
Other topics in nanoscale materials and structures
Photoelectrochemical solar cell
Photovoltaic conversion
Physics
Porous structure
Reflectance
Reflectivity
Solar cells. Photoelectrochemical cells
Solar energy
Specific materials
Surface area
Surface chemistry
Surface reflectance
Thin films
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Summary:Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.02.029