High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Thin HfO2 films were grown as high-k dielectrics for Metal-Insulator-Metal applications by Atomic Vapor Deposition on 8inch TiN/Si substrates using pure tetrakis(ethylmethylamido)hafnium precursor. Influence of deposition temperature (320-400A degree C) and process pressure (2-10mbar) on the structu...

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Bibliographic Details
Published in:Thin solid films 2010-05, Vol.518 (15), p.4380-4384
Main Authors: Lukosius, M., Walczyk, Ch, Fraschke, M., Wolansky, D., Richter, H., Wenger, Ch
Format: Article
Language:English
Subjects:
Capacitance
Capacitors
Density
Deposition
Dielectrics
Hafnium oxide
Thin films
Titanium nitride
Vapor deposition
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Summary:Thin HfO2 films were grown as high-k dielectrics for Metal-Insulator-Metal applications by Atomic Vapor Deposition on 8inch TiN/Si substrates using pure tetrakis(ethylmethylamido)hafnium precursor. Influence of deposition temperature (320-400A degree C) and process pressure (2-10mbar) on the structural and electrical properties of HfO2 was investigated. X-ray diffraction analysis showed that HfO2 layers, grown at 320A degree C were amorphous, while at 400A degree C the films crystallized in cubic phase. Electrical properties, such as capacitance density, capacitance-voltage linearity, dielectric constant, leakage current density and breakdown voltage are also affected by the deposition temperature. Finally, TiN/HfO2/TiN stacks, integrated in the Back-End-of-Line process, possess 3 times higher capacitance density compared to standard TiN/Si3N4/TiN capacitors. Good step coverage (>90%) is achieved on structured wafers with aspect ratio of 2 when HfO2 layers are deposited at 320A degree C and 4mbar.
ISSN:0040-6090
DOI:10.1016/j.tsf.2010.01.060