Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications

In this paper, we present an experimental study on the chemical and electrochemical etching of silicon carbide (SiC) in different HF-based solutions and its application in different fields, such as optoelectronics (photodiode) and environment (gas sensors). The thin SiC films have been grown by puls...

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Bibliographic Details
Published in:Applied surface science 2010-07, Vol.256 (18), p.5629-5639
Main Authors: Keffous, A., Gabouze, N., Cheriet, A., Belkacem, Y., Boukezzata, A.
Format: Article
Language:English
Subjects:
Analytical chemistry
Chemistry
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electro(chemical)
Electrochemical etching
Exact sciences and technology
Gas sensing
Gas sensors
General, instrumentation
Laser deposition
Luminescence
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optoelectronics
Oxidants
Oxidizing agents
Photodiode
Photodiodes
Photoluminescence
Physics
Powders, porous materials
PSC
Silicon carbide
Surface cleaning, etching, patterning
Surface treatments
Thin films
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Summary:In this paper, we present an experimental study on the chemical and electrochemical etching of silicon carbide (SiC) in different HF-based solutions and its application in different fields, such as optoelectronics (photodiode) and environment (gas sensors). The thin SiC films have been grown by pulsed laser deposition method. Different oxidant reagents have been explored. It has been shown that the morphology of the surface evolves with the etching conditions (oxidant, concentration, temperature, etc.). A new chemical polishing solution of polycrystalline 6H-SiC based on HF:Na 2O 2 solution has been developed. Moreover, an electrochemical etching method has been carried out to form a porous SiC layer on both polycrystalline and thin SiC films. The PL results show that the porous polycrystalline 6H-SiC and porous thin SiC films exhibited an intense blue luminescence and a green-blue luminescence centred at 2.82 eV (430 nm) and 2.20 eV (560 nm), respectively. Different device structures based on both prepared samples have been investigated as photodiode and gas sensors.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2010.03.029