Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films

A systematic study of hydrogenated amorphous silicon nitride films deposited by varying gas flow rate ratio ( R = SiH 4/NH 3) using Photo-Chemical Vapour Deposition reveal that as R is increased, dominant phase changes from silicon oxynitride to silicon nitride with embedded silicon nanoclusters. Th...

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Bibliographic Details
Published in:Scripta materialia 2010-09, Vol.63 (6), p.605-608
Main Authors: Singh, Sarab Preet, Srivastava, P., Ghosh, S., Khan, S.A., Oton, Claudio J., Prakash, G. Vijaya
Format: Article
Language:English
Subjects:
Amorphous materials
Evolution
Nanocomposites
Nanomaterials
Nanostructure
Phase stabilization
Photoluminescence
Quantum confinement
Silicon
Silicon nanocrystals
Silicon nitride
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Summary:A systematic study of hydrogenated amorphous silicon nitride films deposited by varying gas flow rate ratio ( R = SiH 4/NH 3) using Photo-Chemical Vapour Deposition reveal that as R is increased, dominant phase changes from silicon oxynitride to silicon nitride with embedded silicon nanoclusters. The change in photoluminescence spectral features in these films is attributed to quantum confinement effect. The results suggest that hydrogen plays a crucial role in overall phase evolution and in-situ formation of Si nanoclusters embedded in silicon nitride matrix.
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2010.05.049