Multiple dip deposition of CdS films prepared by oscillating chemical bath

Highly oriented CdS thin films with thicknesses greater than 1 μm were deposited using the oscillating chemical bath deposition technique with multiple dips at 75 °C, and from 15 to 75 min as deposition times. Samples with different thicknesses were deposited by repeating the chemical deposition pro...

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Bibliographic Details
Published in:Thin solid films 2010-07, Vol.518 (19), p.5387-5390
Main Authors: Gutiérrez-Lazos, C.D., Rosendo, E., Oliva, A.I., Ortega, M., Bartolo-Pérez, P., Juárez, H., Díaz, T., García, G., Rubín, M.
Format: Article
Language:English
Subjects:
Cadmium
Cadmium sulfide
Cadmium sulfides
Chemical bath deposition
Compact disks
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition
Dipping
Dispersions
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Liquid phase epitaxy
deposition from liquid phases (melts, solutions, and surface layers on liquids)
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Oscillating
Physics
Stoichiometry
Structure and morphology
thickness
Surface and interface electron states
Surface states, band structure, electron density of states
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Thin films
X-ray diffraction
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Description
Summary:Highly oriented CdS thin films with thicknesses greater than 1 μm were deposited using the oscillating chemical bath deposition technique with multiple dips at 75 °C, and from 15 to 75 min as deposition times. Samples with different thicknesses were deposited by repeating the chemical deposition process one, two and three times. All CdS films present the α-greenockite hexagonal structure with (002) as the preferential orientation. Band-gap energy values ranged from 2.35 to 2.42 eV, being the smaller value for the two dip processes. Energy dispersion spectroscopy measurements show good stoichiometry of the CdS films with 4.3 at.% as the maximum Cd variation.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.03.065