Interfacial atomic diffusion in AF/Fe/Cu/Fe (AF = Fe 50Mn 50 and Ir 50Mn 50) multilayer systems

• Published in: Thin solid films 2010-08, Vol.518 (21), p.5981-5985
• Main Authors: Kuncser, V., Keune, W., von Hörsten, U., Schinteie, G., Stefan, N., Palade, P., Filoti, G.
• Format: Article
• Language: English
• Subjects: Atomic structure; Chemical interdiffusion; diffusion barriers; Condensed matter: structure, mechanical and thermal properties; Conversion; Conversion Electron Mössbauer Spectroscopy; Copper; Cross-disciplinary physics: materials science; rheology; Diffusion; Diffusion in solids; Diffusion; interface formation; Exact sciences and technology; Interfacial atomic diffusion; Iron; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Multilayers; Physics; Solid surfaces and solid-solid interfaces; Spin valves; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin films; Transport properties of condensed matter (nonelectronic)
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2010.05.100

Spin valve like AF/Fe/Cu/Fe (AF = Fe 50Mn 50 and Ir 50Mn 50) multilayer systems have been prepared by molecular beam epitaxy. Thin tracer layers enriched in the 57Fe isotope were artificially grown at the AF/Fe and Fe/Cu interfaces and the interfacial atomic diffusion was observed via 57Fe conversion electron Mössbauer spectroscopy. The results show that the atomic interdiffusion at all involved interfaces is lower in the IrMn based structures as compared to the FeMn based ones.