Raman spectral study on the thermal stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si structures

Nickel silicide is becoming an important candidate material for the future generation of complementary metal‐oxide semiconductor (CMOS) devices and nanowire hetero‐structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwic...

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Bibliographic Details
Published in:Journal of Raman spectroscopy 2006-09, Vol.37 (9), p.951-953
Main Authors: Shao, Jia, Lu, Jianzheng, Huang, Wei, Gao, Yuzhi, Zhang, Lichun, Zhang, Shu-Lin
Format: Article
Language:English
Subjects:
Devices
Metal oxide semiconductors
Nanostructure
Ni(Pt)Si sandwich structure
Nickel
nickel silicide structure
semiconductor devices
Semiconductors
Silicon
Spectra
Thermal stability
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Summary:Nickel silicide is becoming an important candidate material for the future generation of complementary metal‐oxide semiconductor (CMOS) devices and nanowire hetero‐structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwich structure, a new Ni/Zr/Ni/Si structure can raise the temperature of thermal stability from 650 °C to above 800 °C, thereby helping to improve device technology. Copyright © 2006 John Wiley & Sons, Ltd.
ISSN:0377-0486
1097-4555
DOI:10.1002/jrs.1535