Raman spectral study on the thermal stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si structures

Nickel silicide is becoming an important candidate material for the future generation of complementary metal‐oxide semiconductor (CMOS) devices and nanowire hetero‐structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwic...

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Published in:Journal of Raman spectroscopy 2006-09, Vol.37 (9), p.951-953
Main Authors: Shao, Jia, Lu, Jianzheng, Huang, Wei, Gao, Yuzhi, Zhang, Lichun, Zhang, Shu-Lin
Format: Article
Language:English
Subjects:
Devices
Metal oxide semiconductors
Nanostructure
Ni(Pt)Si sandwich structure
Nickel
nickel silicide structure
semiconductor devices
Semiconductors
Silicon
Spectra
Thermal stability
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cited_by cdi_FETCH-LOGICAL-c3665-d7910b5333f8590224cf9ac59fd2b495294a0eee1c3e3580fef472052106446e3
cites cdi_FETCH-LOGICAL-c3665-d7910b5333f8590224cf9ac59fd2b495294a0eee1c3e3580fef472052106446e3
container_end_page 953
container_issue 9
container_start_page 951
container_title Journal of Raman spectroscopy
container_volume 37
creator Shao, Jia
Lu, Jianzheng
Huang, Wei
Gao, Yuzhi
Zhang, Lichun
Zhang, Shu-Lin
description Nickel silicide is becoming an important candidate material for the future generation of complementary metal‐oxide semiconductor (CMOS) devices and nanowire hetero‐structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwich structure, a new Ni/Zr/Ni/Si structure can raise the temperature of thermal stability from 650 °C to above 800 °C, thereby helping to improve device technology. Copyright © 2006 John Wiley & Sons, Ltd.
doi_str_mv 10.1002/jrs.1535
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_787076954</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29564358</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3665-d7910b5333f8590224cf9ac59fd2b495294a0eee1c3e3580fef472052106446e3</originalsourceid><addsrcrecordid>eNp90F1LwzAUBuAgCs4p-BN6pd50O2m-mksZuqlDZVMG3oSsTbCzHzNp0f17WzcEL_QiJ5ychxN4ETrFMMAA0XDl_AAzwvZQD4MUIWWM7aMeECFCoDE_REferwBASo57aDHThS4DvzZJ7XQe-LpJN0FVBvWr6Y4rvh_1Msuzuh3Y4D4bvrhhW-dZoMu060fVrve1a5K6ccYfowOrc29OdncfPV9fPY0m4fRhfDO6nIYJ4ZyFqZAYlowQYmMmIYpoYqVOmLRptKSSRZJqMMbghBjCYrDGUhEBizBwSrkhfXS-3bt21XtjfK2KzCcmz3VpqsYrEQsQXDLayrN_ZSQZp-0fLbzYwsRV3jtj1dplhXYbhUF1Gas2Y9Vl3NJwSz-y3Gz-dOp2Nv_tM1-bzx-v3ZviggimFvdjxWAajx7vJmpBvgALrIp6</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29564358</pqid></control><display><type>article</type><title>Raman spectral study on the thermal stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si structures</title><source>Wiley:Jisc Collections:Wiley Read and Publish Open Access 2024-2025 (reading list)</source><creator>Shao, Jia ; Lu, Jianzheng ; Huang, Wei ; Gao, Yuzhi ; Zhang, Lichun ; Zhang, Shu-Lin</creator><creatorcontrib>Shao, Jia ; Lu, Jianzheng ; Huang, Wei ; Gao, Yuzhi ; Zhang, Lichun ; Zhang, Shu-Lin</creatorcontrib><description>Nickel silicide is becoming an important candidate material for the future generation of complementary metal‐oxide semiconductor (CMOS) devices and nanowire hetero‐structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwich structure, a new Ni/Zr/Ni/Si structure can raise the temperature of thermal stability from 650 °C to above 800 °C, thereby helping to improve device technology. Copyright © 2006 John Wiley &amp; Sons, Ltd.</description><identifier>ISSN: 0377-0486</identifier><identifier>EISSN: 1097-4555</identifier><identifier>DOI: 10.1002/jrs.1535</identifier><language>eng</language><publisher>Chichester, UK: John Wiley &amp; Sons, Ltd</publisher><subject>Devices ; Metal oxide semiconductors ; Nanostructure ; Ni(Pt)Si sandwich structure ; Nickel ; nickel silicide structure ; semiconductor devices ; Semiconductors ; Silicon ; Spectra ; Thermal stability</subject><ispartof>Journal of Raman spectroscopy, 2006-09, Vol.37 (9), p.951-953</ispartof><rights>Copyright © 2006 John Wiley &amp; Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3665-d7910b5333f8590224cf9ac59fd2b495294a0eee1c3e3580fef472052106446e3</citedby><cites>FETCH-LOGICAL-c3665-d7910b5333f8590224cf9ac59fd2b495294a0eee1c3e3580fef472052106446e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Shao, Jia</creatorcontrib><creatorcontrib>Lu, Jianzheng</creatorcontrib><creatorcontrib>Huang, Wei</creatorcontrib><creatorcontrib>Gao, Yuzhi</creatorcontrib><creatorcontrib>Zhang, Lichun</creatorcontrib><creatorcontrib>Zhang, Shu-Lin</creatorcontrib><title>Raman spectral study on the thermal stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si structures</title><title>Journal of Raman spectroscopy</title><addtitle>J. Raman Spectrosc</addtitle><description>Nickel silicide is becoming an important candidate material for the future generation of complementary metal‐oxide semiconductor (CMOS) devices and nanowire hetero‐structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwich structure, a new Ni/Zr/Ni/Si structure can raise the temperature of thermal stability from 650 °C to above 800 °C, thereby helping to improve device technology. Copyright © 2006 John Wiley &amp; Sons, Ltd.</description><subject>Devices</subject><subject>Metal oxide semiconductors</subject><subject>Nanostructure</subject><subject>Ni(Pt)Si sandwich structure</subject><subject>Nickel</subject><subject>nickel silicide structure</subject><subject>semiconductor devices</subject><subject>Semiconductors</subject><subject>Silicon</subject><subject>Spectra</subject><subject>Thermal stability</subject><issn>0377-0486</issn><issn>1097-4555</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp90F1LwzAUBuAgCs4p-BN6pd50O2m-mksZuqlDZVMG3oSsTbCzHzNp0f17WzcEL_QiJ5ychxN4ETrFMMAA0XDl_AAzwvZQD4MUIWWM7aMeECFCoDE_REferwBASo57aDHThS4DvzZJ7XQe-LpJN0FVBvWr6Y4rvh_1Msuzuh3Y4D4bvrhhW-dZoMu060fVrve1a5K6ccYfowOrc29OdncfPV9fPY0m4fRhfDO6nIYJ4ZyFqZAYlowQYmMmIYpoYqVOmLRptKSSRZJqMMbghBjCYrDGUhEBizBwSrkhfXS-3bt21XtjfK2KzCcmz3VpqsYrEQsQXDLayrN_ZSQZp-0fLbzYwsRV3jtj1dplhXYbhUF1Gas2Y9Vl3NJwSz-y3Gz-dOp2Nv_tM1-bzx-v3ZviggimFvdjxWAajx7vJmpBvgALrIp6</recordid><startdate>200609</startdate><enddate>200609</enddate><creator>Shao, Jia</creator><creator>Lu, Jianzheng</creator><creator>Huang, Wei</creator><creator>Gao, Yuzhi</creator><creator>Zhang, Lichun</creator><creator>Zhang, Shu-Lin</creator><general>John Wiley &amp; Sons, Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>200609</creationdate><title>Raman spectral study on the thermal stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si structures</title><author>Shao, Jia ; Lu, Jianzheng ; Huang, Wei ; Gao, Yuzhi ; Zhang, Lichun ; Zhang, Shu-Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3665-d7910b5333f8590224cf9ac59fd2b495294a0eee1c3e3580fef472052106446e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Devices</topic><topic>Metal oxide semiconductors</topic><topic>Nanostructure</topic><topic>Ni(Pt)Si sandwich structure</topic><topic>Nickel</topic><topic>nickel silicide structure</topic><topic>semiconductor devices</topic><topic>Semiconductors</topic><topic>Silicon</topic><topic>Spectra</topic><topic>Thermal stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shao, Jia</creatorcontrib><creatorcontrib>Lu, Jianzheng</creatorcontrib><creatorcontrib>Huang, Wei</creatorcontrib><creatorcontrib>Gao, Yuzhi</creatorcontrib><creatorcontrib>Zhang, Lichun</creatorcontrib><creatorcontrib>Zhang, Shu-Lin</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Raman spectroscopy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shao, Jia</au><au>Lu, Jianzheng</au><au>Huang, Wei</au><au>Gao, Yuzhi</au><au>Zhang, Lichun</au><au>Zhang, Shu-Lin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Raman spectral study on the thermal stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si structures</atitle><jtitle>Journal of Raman spectroscopy</jtitle><addtitle>J. Raman Spectrosc</addtitle><date>2006-09</date><risdate>2006</risdate><volume>37</volume><issue>9</issue><spage>951</spage><epage>953</epage><pages>951-953</pages><issn>0377-0486</issn><eissn>1097-4555</eissn><abstract>Nickel silicide is becoming an important candidate material for the future generation of complementary metal‐oxide semiconductor (CMOS) devices and nanowire hetero‐structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwich structure, a new Ni/Zr/Ni/Si structure can raise the temperature of thermal stability from 650 °C to above 800 °C, thereby helping to improve device technology. Copyright © 2006 John Wiley &amp; Sons, Ltd.</abstract><cop>Chichester, UK</cop><pub>John Wiley &amp; Sons, Ltd</pub><doi>10.1002/jrs.1535</doi><tpages>3</tpages></addata></record>
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ispartof Journal of Raman spectroscopy, 2006-09, Vol.37 (9), p.951-953
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1097-4555
language eng
recordid cdi_proquest_miscellaneous_787076954
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subjects Devices
Metal oxide semiconductors
Nanostructure
Ni(Pt)Si sandwich structure
Nickel
nickel silicide structure
semiconductor devices
Semiconductors
Silicon
Spectra
Thermal stability
title Raman spectral study on the thermal stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si structures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-23T14%3A12%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Raman%20spectral%20study%20on%20the%20thermal%20stability%20of%20Ni/Zr/Ni/Si%20and%20Ni/Co/Ni/Si%20structures&rft.jtitle=Journal%20of%20Raman%20spectroscopy&rft.au=Shao,%20Jia&rft.date=2006-09&rft.volume=37&rft.issue=9&rft.spage=951&rft.epage=953&rft.pages=951-953&rft.issn=0377-0486&rft.eissn=1097-4555&rft_id=info:doi/10.1002/jrs.1535&rft_dat=%3Cproquest_cross%3E29564358%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3665-d7910b5333f8590224cf9ac59fd2b495294a0eee1c3e3580fef472052106446e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29564358&rft_id=info:pmid/&rfr_iscdi=true