Silicon Absolute X-Ray Detectors

The responsivity of silicon photodiodes having no loss in the entrance window, measured using synchrotron radiation in the 1.75 to 60 keV range, was compared to the responsivity calculated using the silicon thickness measured using near-infrared light. The measured and calculated responsivities agre...

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Published in:Proceedings of the 10th International Conference 2009-10, Vol.1234, p.842-845
Main Authors: Seely, John F, Korde, Raj, Sprunck, Jacob, Medjoubi, Kadda, Hustache, Stephanie
Format: Article
Language:English
Subjects:
Detectors
Entrances
Mathematical analysis
Photodiodes
Silicon
Synchrotron radiation
X-rays
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container_title Proceedings of the 10th International Conference
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creator Seely, John F
Korde, Raj
Sprunck, Jacob
Medjoubi, Kadda
Hustache, Stephanie
description The responsivity of silicon photodiodes having no loss in the entrance window, measured using synchrotron radiation in the 1.75 to 60 keV range, was compared to the responsivity calculated using the silicon thickness measured using near-infrared light. The measured and calculated responsivities agree with an average difference of 1.3%. This enables their use as absolute x-ray detectors.
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Detectors
Entrances
Mathematical analysis
Photodiodes
Silicon
Synchrotron radiation
X-rays
title Silicon Absolute X-Ray Detectors
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