R&D of joining technology for SiC components with channel

The new joining method of SiC components with channel was developed in this study by using hot-press. The SiC ceramics was joined by using mixed Al 2O 3, Y 2O 3, SiO 2 and SiC powders. Joining was carried out at from 1500 °C to 1900 °C for 1 h, under an applied pressure, range from 5 MPa to 20 MPa....

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Bibliographic Details
Published in:Journal of nuclear materials 2009-04, Vol.386, p.847-851
Main Authors: Jung, Hun-Chea, Park, Yi-Hyun, Park, Joon-Soo, Hinoki, Tatsuya, Kohyama, Akira
Format: Article
Language:English
Subjects:
Aluminum oxide
Applied sciences
Ceramics
Channels
Cleaning
Controled nuclear fusion plants
Deformation
Energy
Energy. Thermal use of fuels
Exact sciences and technology
Fission nuclear power plants
Fuels
Installations for energy generation and conversion: thermal and electrical energy
Joining
Mechanical properties
Microstructure
Nuclear fuels
Silicon carbide
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Summary:The new joining method of SiC components with channel was developed in this study by using hot-press. The SiC ceramics was joined by using mixed Al 2O 3, Y 2O 3, SiO 2 and SiC powders. Joining was carried out at from 1500 °C to 1900 °C for 1 h, under an applied pressure, range from 5 MPa to 20 MPa. Microstructural characterization was carried out for the joined materials by optical and scanning electron microscopy. The mechanical property of the joint was evaluated through a tensile test. The joint strength was increased with increasing joining temperature and pressure. In joining of complex shape SiC components, the serious deformation of substrate occurred because of high joining temperature and pressure. The low joining condition, In case of 1800 °C and 20 MPa, deformation of substrate not occurred. It is possible that the deformation of substrate was controlled by joining temperature. The joint layer of SiC component by using new joining method was cleaned and uniformed.
ISSN:0022-3115
1873-4820
DOI:10.1016/j.jnucmat.2008.12.263