Characterization of MoSe sub(2) thin film deposited at room temperature from solution phase

A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of complexed ammonium molybdate, hydrazine hydrate and sodium selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe sub(2) thin fi...

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Bibliographic Details
Published in:Journal of crystal growth 2008-12, Vol.311 (1), p.15-19
Main Authors: Hankare, P P, Patil, A A, Chate, P A, Garadkar, K M, Sathe, D J, Manikshete, AH, Mulla, I S
Format: Article
Language:English
Subjects:
Deposition
Electrical measurement
Hydrazines
Molybdenum
Resistivity
Scanning electron microscopy
Semiconductors
Sodium
Thin films
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Summary:A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of complexed ammonium molybdate, hydrazine hydrate and sodium selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe sub(2) thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap 'E sub(g)' for the film was found to be 1.43 eV and electrical conductivity in the order of 10 super(-2) ([Omega] cm) super(-1) with n-type conduction mechanism.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2008.09.188