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Mid-IR laser oscillation in Cr2+:ZnSe planar waveguide

We demonstrate 2.6 µm mid-infrared lasing at room temperature in a planar waveguide structure. Planar waveguides were fabricated using pulsed laser deposition (PLD) by depositing chromium doped zinc selenide thin films on sapphire substrate (Cr2+:ZnSe/sapphire). Highly doped Cr2+:ZnSe/Sapphire thin...

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Bibliographic Details
Published in:Optics express 2010-12, Vol.18 (25), p.25999-26006
Main Authors: Williams, J E, Fedorov, V V, Martyshkin, D V, Moskalev, I S, Camata, R P, Mirov, S B
Format: Article
Language:English
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Summary:We demonstrate 2.6 µm mid-infrared lasing at room temperature in a planar waveguide structure. Planar waveguides were fabricated using pulsed laser deposition (PLD) by depositing chromium doped zinc selenide thin films on sapphire substrate (Cr2+:ZnSe/sapphire). Highly doped Cr2+:ZnSe/Sapphire thin film sample was also used to demonstrate passive Q-switching of Er:YAG laser operating at 1.645 µm.
ISSN:1094-4087
DOI:10.1364/OE.18.025999