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Mid-IR laser oscillation in Cr2+:ZnSe planar waveguide
We demonstrate 2.6 µm mid-infrared lasing at room temperature in a planar waveguide structure. Planar waveguides were fabricated using pulsed laser deposition (PLD) by depositing chromium doped zinc selenide thin films on sapphire substrate (Cr2+:ZnSe/sapphire). Highly doped Cr2+:ZnSe/Sapphire thin...
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Published in: | Optics express 2010-12, Vol.18 (25), p.25999-26006 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | We demonstrate 2.6 µm mid-infrared lasing at room temperature in a planar waveguide structure. Planar waveguides were fabricated using pulsed laser deposition (PLD) by depositing chromium doped zinc selenide thin films on sapphire substrate (Cr2+:ZnSe/sapphire). Highly doped Cr2+:ZnSe/Sapphire thin film sample was also used to demonstrate passive Q-switching of Er:YAG laser operating at 1.645 µm. |
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ISSN: | 1094-4087 |
DOI: | 10.1364/OE.18.025999 |