Microwave Power Limiting Devices Based on the Semiconductor-Metal Transition in Vanadium-Dioxide Thin Films

We present a novel concept of microwave (MW) power-limiting devices based on reversible semiconductor-to-metal transition (SMT) of vanadium-dioxide thin films integrated on coplanar waveguides. We designed, simulated, and fabricated devices, which can be reversibly driven from a low-loss ( 20 dB) as...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2010-09, Vol.58 (9), p.2352-2361
Main Authors: Givernaud, Julien, Crunteanu, Aurelian, Orlianges, Jean-Cristophe, Pothier, Arnaud, Champeaux, Corinne, Catherinot, Alain, Blondy, Pierre
Format: Article
Language:English
Subjects:
Applied sciences
Attenuation
Circuit properties
Constraining
Coplanar waveguide (CPW) waveguide
Coplanar waveguides
Design. Technologies. Operation analysis. Testing
Devices
Electric, optical and optoelectronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Inorganic materials
Integrated circuits
microwave (MW) limiters
Microwave and submillimeter wave devices, electron transfer devices
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave devices
Microwaves
Noise levels
power dividers and combiners
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor materials
Semiconductor thin films
Semiconductor waveguides
semiconductor-metal transition (SMT)
Semiconductors
Surface-mount technology
Thin film devices
Thin films
Thresholds
Tunable circuits and devices
vanadium dioxide
Waveguide transitions
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a novel concept of microwave (MW) power-limiting devices based on reversible semiconductor-to-metal transition (SMT) of vanadium-dioxide thin films integrated on coplanar waveguides. We designed, simulated, and fabricated devices, which can be reversibly driven from a low-loss ( 20 dB) as the VO 2 material is changing from semiconductor to the metal state when the incident MW power exceeds a threshold value. These devices are broadband and present a tunable threshold power value. They could be easily integrated as protection circuits from excess power in a large variety of MW components.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2010.2057172