The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

In this paper, we propose to derive an analytical model for the doped symmetric double-gate (DG) MOSFET that is valid in all regions of operation. We show that doping the silicon channel can be converted in an equivalent silicon thickness and threshold voltage shift using a formalism developed for t...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-11, Vol.57 (11), p.2917-2924
Main Authors: Sallese, Jean-Michel, Chevillon, Nicolas, Prégaldiny, Fabien, Lallement, Christophe, Iñiguez, Benjamin
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Computer aided design
Devices
Doping
Electric potential
Electronics
Equivalence
Exact sciences and technology
FETs
Formalism
Mathematical analysis
Mathematical models
MOSFETs
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Transistors
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Summary:In this paper, we propose to derive an analytical model for the doped symmetric double-gate (DG) MOSFET that is valid in all regions of operation. We show that doping the silicon channel can be converted in an equivalent silicon thickness and threshold voltage shift using a formalism developed for the undoped device. Adopting the same physical parameters, we demonstrate that this approach is in agreement with numerical technology computer-aided design simulations. This concept is therefore an interesting basis for a unified model for doped and undoped symmetric DG MOSFETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2071090