Enhancement on effective piezoelectric coefficient of Bi3.25Eu0.75Ti3O12 ferroelectric thin films under moderate annealing temperature

• Published in: Thin solid films 2010-11, Vol.519 (2), p.714-718
• Main Authors: ZHENG, X. J, PENG, J. F, CHEN, Y. Q, HE, L, FENG, X, ZHANG, D. Z, GONG, L. J, WU, Q. Y
• Format: Article
• Language: English
• Subjects: Annealing; Coefficients; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Dielectric thin films; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Ferroelectric materials; Ferroelectricity; Mathematical analysis; Physics; Piezoelectricity; Polarization; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2010.08.130

Bi3.25Eu0.75Ti3O12 (BET) thin films were deposited on Pt/Ti/SiO2/Si(111) substrates by a metal-organic decomposition method. The effects of annealing temperatures 600-800AC on microstructure, ferroelectric, dielectric and piezoelectric properties of BET thin films were studied in detail. The spontaneous polarization (87.4A-10a6 C/cm2 under 300kV/cm), remnant polarization (65.7A-10a6 C/cm2 under 300kV/cm), the dielectric constant (992.9 at 100kHz) and the effective piezoelectric coefficient d 33 (67.3pm/V under 260kV/cm) of BET thin film annealed at 700AC are better than those of the others. The mechanisms concerning the dependence of the enhancement d 33 are discussed according to the phenomenological equation, and the improved piezoelectric performance could make the BET thin film a promising candidate for piezoelectric thin film devices.