Multilayers of Ge nanocrystals embedded in Al sub(2)O sub(3) matrix: Structural and electrical studies

In this paper, Ge/Al sub(2)O sub(3) multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system....

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Bibliographic Details
Published in:Microelectronic engineering 2010-12, Vol.87 (12), p.2508-2512
Main Authors: Pinto, SRC, Rolo, A G, Chahboun, A, Buljan, Maja, Khodorov, A, Kashtiban, R J, Bangert, U, Barradas, N P, Alves, E, Bernstorff, S, Gomes, MJM
Format: Article
Language:English
Subjects:
Aluminum oxide
Germanium
Grazing incidence
Multilayers
Nanocrystals
Nanostructure
Trapping
Volt-ampere characteristics
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Summary:In this paper, Ge/Al sub(2)O sub(3) multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.
ISSN:0167-9317
DOI:10.1016/j.mee.2010.06.002