Polarimetric performance of Si/CdTe semiconductor Compton camera

A Compton camera has been developed based on Si and CdTe semiconductor detectors with high spatial and spectral resolution for hard X- and γ ‐ray astrophysics applications. A semiconductor Compton camera is also an excellent polarimeter due to its capability to precisely measure the Compton scatteri...

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Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2010-10, Vol.622 (3), p.619-627
Main Authors: Takeda, Shin’ichiro, Odaka, Hirokazu, Katsuta, Junichiro, Ishikawa, Shin-nosuke, Sugimoto, So-ichiro, Koseki, Yuu, Watanabe, Shin, Sato, Goro, Kokubun, Motohide, Takahashi, Tadayuki, Nakazawa, Kazuhiro, Fukazawa, Yasushi, Tajima, Hiroyasu, Toyokawa, Hidenori
Format: Article
Language:English
Subjects:
Accelerators
Beams (radiation)
Cadmium tellurides
Cameras
Compton camera
Detectors
Elastic scattering
Gamma-ray astronomy
Polarimeter
Semiconductors
Silicon
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Summary:A Compton camera has been developed based on Si and CdTe semiconductor detectors with high spatial and spectral resolution for hard X- and γ ‐ray astrophysics applications. A semiconductor Compton camera is also an excellent polarimeter due to its capability to precisely measure the Compton scattering azimuth angle, which is modulated by linear polarization. We assembled a prototype Compton camera and conducted a beam test using nearly 100% linearly polarized γ ‐ rays at SPring-8.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2010.07.077