Limits on charge carrier mobility in suspended graphene due to flexural phonons

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T≳10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few...

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Bibliographic Details
Published in:Physical review letters 2010-12, Vol.105 (26), p.266601-266601, Article 266601
Main Authors: Castro, Eduardo V, Ochoa, H, Katsnelson, M I, Gorbachev, R V, Elias, D C, Novoselov, K S, Geim, A K, Guinea, F
Format: Article
Language:English
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Summary:The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T≳10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/V s at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.105.266601