Gate-voltage control of chemical potential and weak antilocalization in Bi₂Se

We report that Bi₂Se₃ thin films can be epitaxially grown on SrTiO₃ substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density...

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Bibliographic Details
Published in:Physical review letters 2010-10, Vol.105 (17), p.176602-176602
Main Authors: Chen, J, Qin, H J, Yang, F, Liu, J, Guan, T, Qu, F M, Zhang, G H, Shi, J R, Xie, X C, Yang, C L, Wu, K H, Li, Y Q, Lu, L
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Language:English
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Summary:We report that Bi₂Se₃ thin films can be epitaxially grown on SrTiO₃ substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.
ISSN:1079-7114