Migration and localization of metal atoms on strained graphene

Reconstructed point defects in graphene are created by electron irradiation and annealing. By applying electron microscopy and density functional theory, it is shown that the strain field around these defects reaches far into the unperturbed hexagonal network and that metal atoms have a high affinit...

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Bibliographic Details
Published in:Physical review letters 2010-11, Vol.105 (19), p.196102-196102, Article 196102
Main Authors: Cretu, Ovidiu, Krasheninnikov, Arkady V, Rodríguez-Manzo, Julio A, Sun, Litao, Nieminen, Risto M, Banhart, Florian
Format: Article
Language:English
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Summary:Reconstructed point defects in graphene are created by electron irradiation and annealing. By applying electron microscopy and density functional theory, it is shown that the strain field around these defects reaches far into the unperturbed hexagonal network and that metal atoms have a high affinity to the nonperfect and strained regions of graphene. Metal atoms are attracted by reconstructed defects and bonded with energies of about 2 eV. The increased reactivity of the distorted π-electron system in strained graphene allows us to attach metal atoms and to tailor the properties of graphene.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.105.196102