A novel field effect transistor with dielectric polymer gel

A novel organic-field effect transistor (OFET) has been fabricated. This device is original in the sense that it can be produced in ambient conditions with facile and cost-effective methods. Experimental results surprisingly revealed a high mobility value at the order of 0.38 cm 2/Vs, and the gate v...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2011, Vol.88 (1), p.17-20
Main Authors: Kösemen, Arif, San, Sait Eren, Okutan, Mustafa, Doğruyol, Zekeriya, Demir, Ahmet, Yerli, Yusuf, Şengez, Büşra, Başaran, Engin, Yılmaz, Faruk
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Cross-disciplinary physics: materials science
rheology
Devices
Dielectric
Dielectrics
Drains
Electric potential
Electrodes
Electronics
Exact sciences and technology
Glasses (including metallic glasses)
Materials science
Mobility
OFET
Other materials
Physics
Polymer gel
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Transistors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A novel organic-field effect transistor (OFET) has been fabricated. This device is original in the sense that it can be produced in ambient conditions with facile and cost-effective methods. Experimental results surprisingly revealed a high mobility value at the order of 0.38 cm 2/Vs, and the gate voltage is also found to be lower than 1 V. The device exhibited excellent transistor characteristics at low voltages. Threshold voltage is around 0.26 V with 10 3 on/off ratio. The device design is based on high effective capacitance value of a polymer gel, 1 μF, which is sandwiched between glass substrates on which source and drain electrodes were constructed.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2010.08.004