Ohmic contacts and n-type doping on TixCr2axO3 films and the temperature dependence of their transport properties

A procedure to dope n-type Cr2axTixO3 thin films is proposed. Besides doping the material, at the same time the method forms ohmic contacts on TixCr2axO3 films. It consists on the deposition of 10nm Ti and 50nm Au, followed by thermal annealing at 1000AC for 20min in N2 atmosphere. Ohmic contacts we...

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Bibliographic Details
Published in:Thin solid films 2010-10, Vol.519 (1), p.453-456
Main Authors: Rangel-Kuoppa, Victor-Tapio, Conde-Gallardo, Agustin
Format: Article
Language:English
Subjects:
Annealing
Composition effects
Contact resistance
Density
Deposition
Dopes
Doping
Temperature dependence
Thin films
Online Access:Get full text
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Summary:A procedure to dope n-type Cr2axTixO3 thin films is proposed. Besides doping the material, at the same time the method forms ohmic contacts on TixCr2axO3 films. It consists on the deposition of 10nm Ti and 50nm Au, followed by thermal annealing at 1000AC for 20min in N2 atmosphere. Ohmic contacts were formed on three samples with different composition: x=0.17, 0.41 and 1.07 in a van der Pauw geometry for Hall effect measurements. These measurements are done between 35K and 373K. All samples showed n-type nature, with a charge carrier density (n) on the order of 1020 cma3, decreasing as x increased. As a function of temperature, n shows a minimum around 150K, while the mobilities have an almost constant value of 11, 28 and 7cm2Va1 sa1 for x=0.17, 0.41 and 1.07, respectively.
ISSN:0040-6090
DOI:10.1016/j.tsf.2010.07.087