Effect of ultrasonic frequency on electrochemical Si etching in porous Si layer transfer process for thin film solar cell fabrication

A porous Si (PS) layer transfer process that monocrystalline Si film grown on a Si substrate wafer is separated with the substrate and transferred to a non-Si device realizes to get monocrystalline Si film on low-cost substrates such as glass. PS film is fabricated by electrochemical etching in a ch...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2011, Vol.95 (1), p.77-80
Main Authors: Lee, Ju-Young, Han, Wone-Keun, Lee, Jae-Ho
Format: Article
Language:English
Subjects:
Applied sciences
Direct energy conversion and energy accumulation
Electrical engineering. Electrical power engineering
Electrical power engineering
Electrochemical etching
Energy
Etching
Ethyl alcohol
Exact sciences and technology
Layer transfer
Natural energy
Photoelectric conversion
Photovoltaic cells
Photovoltaic conversion
Polystyrene resins
Porous silicon
Silicon
Silicon films
Silicon substrates
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Ultrasonic
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Summary:A porous Si (PS) layer transfer process that monocrystalline Si film grown on a Si substrate wafer is separated with the substrate and transferred to a non-Si device realizes to get monocrystalline Si film on low-cost substrates such as glass. PS film is fabricated by electrochemical etching in a chemical mixture of HF and ethanol. Effect of ultrasonic frequency on surface morphology of PS film is studied. By applying ultrasonic waves during etching, the pores on PS film with uniform size can be fabricated.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2010.04.058