Accurate operation of a CMOS integrated temperature sensor

A high-accuracy temperature sensor is designed by applying the temperature characteristics of substrate bipolar transistor in CMOS technology. Initial accuracy of the temperature sensor can be improved by chopper amplifiers and dynamic element matching. Using these two methods, the circuit realizati...

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Published in:Microelectronics 2010-12, Vol.41 (12), p.897-905
Main Authors: Li, Jiang, Weisheng, Xu, Youlin, Yu
Format: Article
Language:English
Subjects:
Amplifiers
Chip formation
Chopper
Circuits
CMOS
Dynamic element matching
Electric potential
Matching
Power dissipation
Reference voltage
Substrate bipolar transistor
Temperature sensor
Temperature sensors
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description A high-accuracy temperature sensor is designed by applying the temperature characteristics of substrate bipolar transistor in CMOS technology. Initial accuracy of the temperature sensor can be improved by chopper amplifiers and dynamic element matching. Using these two methods, the circuit realization of reference voltage is also described. Simulation results show that the inaccuracy is within×0.4°C from −40 to +100°C. Experimental results, obtained from circuits fabricated in 0.5μm CMOS process, indicate that the sensor is inaccurate within×0.7°C from −40 to +100°C. The power dissipation is 0.35mW and the chip area is 889μm×620μm. Compared with previously reported work, the temperature sensor in the paper has lower inaccuracy without calibration.
doi_str_mv 10.1016/j.mejo.2010.08.001
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source ScienceDirect Journals
subjects Amplifiers
Chip formation
Chopper
Circuits
CMOS
Dynamic element matching
Electric potential
Matching
Power dissipation
Reference voltage
Substrate bipolar transistor
Temperature sensor
Temperature sensors
title Accurate operation of a CMOS integrated temperature sensor
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