Epitaxial Ni films for ballistic ferromagnetic nanostructures

Nickel films of 170 nm thick were grown on sapphire substrates of the A, R and C orientations. Their electric characteristics and surface morphology were studied. Peculiarities of the film growth and optimum growth conditions for films of high electron mobility were determined. Nickel films grown on...

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Bibliographic Details
Published in:Thin solid films 2010-10, Vol.519 (1), p.527-535
Main Authors: Malikov, I.V., Fomin, L.A., Vinnichenko, V.Yu, Mikhailov, G.M.
Format: Article
Language:English
Subjects:
Ballistic electron transport
Bend magnetoresistance
Electron mobility
Epitaxy
Ferromagnetic materials
Growth mechanism
Mean free path
Nanocomposites
Nanomaterials
Nanostructure
Nickel
Sapphire
Surface morphology
Thin films
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Summary:Nickel films of 170 nm thick were grown on sapphire substrates of the A, R and C orientations. Their electric characteristics and surface morphology were studied. Peculiarities of the film growth and optimum growth conditions for films of high electron mobility were determined. Nickel films grown on the sapphire A-plane with a high residual electron mean free path were found suitable for the fabrication of ballistic planar ferromagnetic nanostructures. Ballistic electron transport was observed in cross-type epitaxial Ni (111) nanostructures.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.07.028