Process Dependence of Proton-Induced Degradation in GaN HEMTs

The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH 3 -rich conditions. The NH 3 -rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/ f noise of the devices increases with increasing fluence. Dens...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3060-3065
Main Authors: Roy, T, En Xia Zhang, Puzyrev, Y S, Fleetwood, D M, Schrimpf, R D, Choi, B K, Hmelo, A B, Pantelides, S T
Format: Article
Language:English
Subjects:
1/ f noise
AlGaN/GaN
Degradation
Density functional theory
Devices
Gallium nitride
Gallium nitrides
HEMT
HEMTs
High electron mobility transistors
Logic gates
Mathematical analysis
MODFETs
Noise
proton
Proton irradiation
Protons
Radiation effects
Semiconductor devices
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Summary:The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH 3 -rich conditions. The NH 3 -rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/ f noise of the devices increases with increasing fluence. Density functional theory calculations show that N vacancies and Ga-N divacancies lead to enhanced noise in these devices.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2073720