Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs

Comprehensive 3-D mixed-mode simulations, including accurate modeling of parasitic elements present in the experimental setup, resulted in close agreement between simulated and experimentally-measured heavy-ion-induced transients in first-generation SiGe HBTs. We have identified the key factors affe...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3342-3348
Main Authors: Turowski, W, Pellish, J A, Moen, K A, Raman, A, Cressler, J D, Reed, R A, Guofu Niu
Format: Article
Language:English
Subjects:
3D semiconductor device modeling
Accumulators
Bias
Collectors
Computer simulation
Heterojunction bipolar transistors
High speed
Mathematical models
Mixed mode
nuclear and space radiation effects
Radiation effects
Radiation hardening
Semiconductor device modeling
SiGe HBT
Silicon germanides
Silicon germanium
single event effects
Single event transient
single event transients
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Summary:Comprehensive 3-D mixed-mode simulations, including accurate modeling of parasitic elements present in the experimental setup, resulted in close agreement between simulated and experimentally-measured heavy-ion-induced transients in first-generation SiGe HBTs. We have identified the key factors affecting previous simulations and observed experimental differences. The approach employed is also applicable to other submicron, high-speed technologies. Furthermore, we present a plausible answer to the previously unexplained issue of higher collector currents in single-transistor SiGe HBT single-event transients under positive collector bias. The new observations and conclusions facilitate improved understanding and potential mitigation options.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2076835