Incorporation of group, IV and V elements in 3C-SiC(1 1 1) layers grown by the vapour-liquid-solid mechanism

• Published in: Journal of crystal growth 2010-11, Vol.312 (23), p.3443-3450
• Main Authors: Lorenzzi, J, Zoulis, G, Marinova, M, Kim-Hak, O, Sun, J W, Jegenyes, N, Peyre, H, Cauwet, F, Chaudouet, P, Soueidan, M, Carole, D, Camassel, J, Polychroniadis, E K, Ferro, G
• Format: Article
• Language: English
• Subjects: Aluminum; Bonding; Crystal growth; Gallium; Germanium; Impurities; Melts; Tin
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.08.058

We report on a comparative investigation of the incorporation of group, IV and V impurities in 3C-SiC heteroepitaxial layers grown by the vapour-liquid-solid (VLS) mechanism on on-axis a-SiC substrates. To this end, various Si-based melts have been used with addition of Al, Ga, Ge and Sn species. Homoepitaxial a-SiC layers grown using Al-based melts were used for comparison purposed for Al incorporation. Nitrogen incorporation depth profile systematically displays an overshoot at the substrate/epilayer interface for all the layers. Ga and Al incorporations follow the same distribution shape as N whereas this is not the case for the isoelectronic impurities Ge and Sn. This suggests some interaction between Ga/Al and N coming from the high bonding energy between the group III and V elements, which does not exist with Ge and Sn. This is why both incorporate as a cluster. A model of incorporation is proposed taking into account metal-N and metal-C bonding energies together with the solid solubility of the corresponding nitrides.