Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs

High-bandwidth (16 GHz) time-resolved charge-collection measurements for heavy-ion irradiation of up to 70 GeV/amu are performed on low-power 6.1 Å lattice spacing InAlSb/InAs HEMT devices. Event cross sections are measured to be significantly larger than the active areas of the devices. Novel energ...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3358-3365
Main Authors: McMorrow, D, Warner, J, DasGupta, S, Ramachandran, V, Boos, J B, Reed, R, Schrimpf, R, Paillet, P, Ferlet-Cavrois, V, Baggio, J, Buchner, S, El-Mamouni, F, Raine, M, Duhamel, O
Format: Article
Language:English
Subjects:
Charge collection
HEMTs
high-electron-mobility transistor (HEMT)
indium arsenide (InAs)
Indium compounds
Ion radiation effects
Single event transient
single-event effect (SEE)
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Summary:High-bandwidth (16 GHz) time-resolved charge-collection measurements for heavy-ion irradiation of up to 70 GeV/amu are performed on low-power 6.1 Å lattice spacing InAlSb/InAs HEMT devices. Event cross sections are measured to be significantly larger than the active areas of the devices. Novel energy-dependent effects are observed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2086487