Silicon PV devices based on a single step for doping, anti-reflection and surface passivation

A simplified process for photovoltaic device fabrication is explored. The simplified process incorporates a single step wherein a thin film of phosphorus doped spin on dopant (SOD) serves as dopant source, anti-reflection coating (ARC) and a surface passivation layer. Detailed fabrication and photov...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2010-12, Vol.94 (12), p.2205-2211
Main Authors: Iyengar, Vikram V., Nayak, Barada K., Gupta, Mool C.
Format: Article
Language:English
Subjects:
Applied sciences
Crystalline silicon
Energy
Equipments, installations and applications
Exact sciences and technology
Low cost process
Natural energy
Photovoltaic conversion
Photovoltaics
Solar cell
Solar cells. Photoelectrochemical cells
Solar energy
Spin on dopants (SOD)
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Summary:A simplified process for photovoltaic device fabrication is explored. The simplified process incorporates a single step wherein a thin film of phosphorus doped spin on dopant (SOD) serves as dopant source, anti-reflection coating (ARC) and a surface passivation layer. Detailed fabrication and photovoltaic device characterization results are presented. Device results for solar cells fabricated on low minority carrier lifetime Cz-substrates and high minority carrier lifetime Fz (polished and chemically textured substrates) are presented. Using this simplified process, photovoltaic devices with conversion efficiency of over 15% on c-Si wafers have been demonstrated. Further improvements in efficiency are possible by reduction in series resistance, control of surface dopant concentration and a rear passivated electrode configuration.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2010.07.013