Investigation of dislocations in 8 degree off-axis 4H-SiC epilayer

This paper reports that the etching morphology of dislocations in 8 degree off-axis 4H-SiC epilayer is observed by using a scanning electronic microscope. It is found that different types of dislocations correspond with different densities and basal plane dislcation (BPD) array and threading edge di...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2010-07, Vol.19 (7), p.076106-076106
Main Authors: Rui-Xia, Miao, Yu-Ming, Zhang, Yi-Men, Zhang, Xiao-Yan, Tang, Qing-Feng, Gai
Format: Article
Language:English
Subjects:
Arrays
Basal plane
Blocking
Crystal defects
Crystals
Density
Dislocations
Electronics
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper reports that the etching morphology of dislocations in 8 degree off-axis 4H-SiC epilayer is observed by using a scanning electronic microscope. It is found that different types of dislocations correspond with different densities and basal plane dislcation (BPD) array and threading edge dislocation (TED) pileup group lie along some certain crystal directions in the epilayer. It is concluded that the elastic energy of threading screw dislocations (TSDs) is highest and TEDs is lowest among these dislocations, so the density of TSDs is lower than TEDs. The BPDs can convert to TEDs but TSDs can only propagate into the epilyer in spite of the higher elastic energy than TEDs. The reason of the form of BPDs array in epilayer is that the big step along the basal plane caused by face defects blocked the upstream atoms, and TEDs pileup group is that the dislocations slide is blocked by dislocation groups in epilayer.
ISSN:1674-1056
DOI:10.1088/1674-1056/19/7/076106