The Role of CuAlO Interface Layer for Switching Behavior of Al/ hbox Cu x hbox O /Cu Memory Device

The interface layer between a reactive electrode and switching metal oxide is quite critical to improve the switching characteristics, but the intrinsic roles of this interfacial layer as oxygen reservoir or switching layer are still controversial. In this letter, we investigated the switching behav...

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Bibliographic Details
Published in:IEEE electron device letters 2010-12, Vol.31 (12), p.1464-1466
Main Authors: Lv, Hangbing, Tang, Tingao
Format: Article
Language:English
Subjects:
Aluminum
Annealing
Copper
Data storage
Deposition
Devices
Electrodes
Switching
Online Access:Get full text
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Summary:The interface layer between a reactive electrode and switching metal oxide is quite critical to improve the switching characteristics, but the intrinsic roles of this interfacial layer as oxygen reservoir or switching layer are still controversial. In this letter, we investigated the switching behavior of hbox Cu x hbox O -based device by fully removing the top insulating hbox Cu 2 hbox O layer, with lower conductive gradient hbox Cu x hbox O layer left. The devices with Pt/gradient hbox Cu x hbox O /Cu structure were shorted; however, other devices with Al/gradient hbox Cu x hbox O /Cu structure still functioned normally. We suggest the interface layer formed between Al and hbox Cu x hbox O acts as the switching layer. The results of an annealing experiment further reinforce this conclusion. The samples with preannealing before Al electrode deposition show similar characteristics with the nonannealed samples; however, the postannealing devices exhibit tremendous difference. Both R rm ini and V rm forming increase with the annealing temperature greatly.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2081339