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GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate
Monolithic integration of III−V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III−V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes...
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| Published in: | Nano letters 2011-02, Vol.11 (2), p.385-390 |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-a410t-fd59b443647fd0231a638c9d61cb6d83cbe13cfd447822d9f06b7eb0e0e16e0d3 |
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| cites | |
| container_end_page | 390 |
| container_issue | 2 |
| container_start_page | 385 |
| container_title | Nano letters |
| container_volume | 11 |
| creator | Chuang, Linus C Sedgwick, Forrest G Chen, Roger Ko, Wai Son Moewe, Michael Ng, Kar Wei Tran, Thai-Truong D Chang-Hasnain, Connie |
| description | Monolithic integration of III−V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III−V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode. |
| doi_str_mv | 10.1021/nl102988w |
| format | article |
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| fulltext | fulltext |
| identifier | ISSN: 1530-6984 |
| ispartof | Nano letters, 2011-02, Vol.11 (2), p.385-390 |
| issn | 1530-6984 1530-6992 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_851228487 |
| source | American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list) |
| subjects | Applied sciences Arsenicals - chemistry Cross-disciplinary physics: materials science rheology Crystallization - methods Electronics Equipment Design Equipment Failure Analysis Exact sciences and technology Gallium - chemistry Lighting - instrumentation Materials science Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology - instrumentation Optoelectronic devices Particle Size Photometry - instrumentation Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon - chemistry Systems Integration |
| title | GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate |
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