Nanostructured CrN thin films prepared by reactive pulsed DC magnetron sputtering

High quality chromium nitride (CrN) films have been deposited onto silicon (1 0 0) substrates using pulsed DC magnetron sputtering of pure Cr target at different gas mixtures of argon and nitrogen and in the substrate temperature range 303–973 K. At low N 2 flow rates (

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2010-02, Vol.167 (1), p.17-25
Main Authors: Elangovan, T., Kuppusami, P., Thirumurugesan, R., Ganesan, V., Mohandas, E., Mangalaraj, D.
Format: Article
Language:English
Subjects:
Atomic force microscopy
Chromium
Chromium nitride
Deposition
Flow rate
Magnetron sputtering
Nanomaterials
Nanostructure
Phases
Silicon substrates
Texture
X-ray diffraction
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Description
Summary:High quality chromium nitride (CrN) films have been deposited onto silicon (1 0 0) substrates using pulsed DC magnetron sputtering of pure Cr target at different gas mixtures of argon and nitrogen and in the substrate temperature range 303–973 K. At low N 2 flow rates (
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2010.01.021