Use of epitaxial gallium arsenide in detectors

The results of investigations of semiconductor detectors on the basis of epitaxial layers of gallium arsenide for detecting x rays and low-energy radiation are examined. It is shown that epitaxial layers ranging in thickness from 60 to 300 µm with current carrier density ≤5·10^sup 13^ cm^sup -3^ and...

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Bibliographic Details
Published in:Atomic energy (New York, N.Y.) N.Y.), 2007-11, Vol.103 (5), p.901-905
Main Authors: Zaletin, V. M., Tuzov, Yu. V., Dvoryankin, V. F., Sokolovskii, A. A.
Format: Article
Language:English
Subjects:
Electrons
Gallium
Gallium arsenide
Photovoltaics
Sensors
X-rays
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Summary:The results of investigations of semiconductor detectors on the basis of epitaxial layers of gallium arsenide for detecting x rays and low-energy radiation are examined. It is shown that epitaxial layers ranging in thickness from 60 to 300 µm with current carrier density ≤5·10^sup 13^ cm^sup -3^ and electron mobility ≥6000 cm^sup 2^/(V·sec) at 300 K hold promise for such detectors. A new type of photovoltaic x-ray detector based on the epitaxial structures p^sup +^-n-n^sup i^-n^sup +^ GaAs is described. Such detectors possess high charge collection efficiency with zero bias at room temperature and can operate in two regimes -- counting and current integration -- and will substantially expand the dynamical range of image formation when used in scanning systems.[PUBLICATION ABSTRACT]
ISSN:1063-4258
1573-8205
DOI:10.1007/s10512-007-0143-7