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Growth and characterization of nitrogen-doped TiO2 thin films prepared by reactive pulsed laser deposition

Nitrogen-doped titanium dioxide (TiO2) thin films were grown on (001) SiO2 substrates by reactive pulsed laser deposition. A KrF* excimer laser source (I' =248nm, Ie" FWHM a[control]?10ns, I[frac12] =10Hz) was used for the irradiations of pressed powder targets composed by both anatase and...

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Bibliographic Details
Published in:Thin solid films 2010-12, Vol.519 (4), p.1464-1469
Main Authors: SAUTHIER, G, FERRER, F. J, FIGUERAS, A, GYÖRGY, E
Format: Article
Language:English
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Summary:Nitrogen-doped titanium dioxide (TiO2) thin films were grown on (001) SiO2 substrates by reactive pulsed laser deposition. A KrF* excimer laser source (I' =248nm, Ie" FWHM a[control]?10ns, I[frac12] =10Hz) was used for the irradiations of pressed powder targets composed by both anatase and rutile phase TiO2. The experiments were performed in a controlled reactive atmosphere consisting of oxygen or mixtures of oxygen and nitrogen gases. The obtained thin film crystal structure was investigated by X-ray diffraction, while their chemical composition as well as chemical bonding states between the elements were studied by X-ray photoelectron spectroscopy. An interrelation was found between nitrogen concentration, crystalline structure, bonding states between the elements, and the formation of titanium oxinitride compounds. Moreover, as a result of the nitrogen incorporation in the films a continuous red-shift of the optical absorption edge accompanied by absorption in the visible spectral range between 400 and 500nm wavelength was observed.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.09.043