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Growth and characterization of nitrogen-doped TiO2 thin films prepared by reactive pulsed laser deposition
Nitrogen-doped titanium dioxide (TiO2) thin films were grown on (001) SiO2 substrates by reactive pulsed laser deposition. A KrF* excimer laser source (I' =248nm, Ie" FWHM a[control]?10ns, I[frac12] =10Hz) was used for the irradiations of pressed powder targets composed by both anatase and...
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Published in: | Thin solid films 2010-12, Vol.519 (4), p.1464-1469 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Nitrogen-doped titanium dioxide (TiO2) thin films were grown on (001) SiO2 substrates by reactive pulsed laser deposition. A KrF* excimer laser source (I' =248nm, Ie" FWHM a[control]?10ns, I[frac12] =10Hz) was used for the irradiations of pressed powder targets composed by both anatase and rutile phase TiO2. The experiments were performed in a controlled reactive atmosphere consisting of oxygen or mixtures of oxygen and nitrogen gases. The obtained thin film crystal structure was investigated by X-ray diffraction, while their chemical composition as well as chemical bonding states between the elements were studied by X-ray photoelectron spectroscopy. An interrelation was found between nitrogen concentration, crystalline structure, bonding states between the elements, and the formation of titanium oxinitride compounds. Moreover, as a result of the nitrogen incorporation in the films a continuous red-shift of the optical absorption edge accompanied by absorption in the visible spectral range between 400 and 500nm wavelength was observed. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2010.09.043 |