A Highly Linear Two-Stage Amplifier Integrated Circuit Using InGaP/GaAs HBT

This paper presents a linearized two-stage amplifier integrated circuit (IC), having an output power level of about 1 Watt, used for general purpose applications. A predistortion method, based on alignment of the nonlinear characteristics between the first- and the second-stage amplifiers, has been...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2010-10, Vol.45 (10), p.2038-2043
Main Authors: Choi, Kyunggon, Kim, Minsu, Kim, Hyungchul, Jung, Sungchan, Cho, Jaeyong, Yoo, Sungchul, Kim, Yong Hwan, Yoo, Hyungmo, Yang, Youngoo
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Bias
Circuit properties
Circuits
Compressing
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Gain
Gain block
Gallium arsenide
Gallium arsenides
general purpose amplifier
Heterojunction bipolar transistors
InGaP/GaAs HBT
Integrated circuit modeling
Integrated circuits
Linearity
Noise levels
Power generation
Resistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Studies
third-order intercept point (OIP3)
third-order intermodulation distortion (IMD3)
Transistors
two-stage amplifier
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Summary:This paper presents a linearized two-stage amplifier integrated circuit (IC), having an output power level of about 1 Watt, used for general purpose applications. A predistortion method, based on alignment of the nonlinear characteristics between the first- and the second-stage amplifiers, has been proposed and analyzed in order to enhance the linearization aspects. The resistors in the active bias circuits of both the stages are optimized to achieve the best cancellation conditions for the third-order intermodulation components. The two-stage amplifier IC, which is based on an InGaP/GaAs hetero-junction bipolar transistor (HBT) technology, has been designed and implemented for the 900 MHz band. An output 1 dB compression point (P1dB) of 29.6 dBm, a maximum third-order output intercept point (OIP3) of as high as 48.7 dBm at a two-tone average output power of 21 dBm have been obtained while having a quiescent current of 375 mA and a single bias supply of 5.5 V. The implemented amplifier is able to maintain its IMD3 performance below -60 dBc up to an output power of 21 dBm.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2010.2061612