The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition

Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles o...

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Bibliographic Details
Published in:Nanotechnology 2010-10, Vol.21 (41), p.415604-415604
Main Authors: Červenka, J, Ledinský, M, Stuchlík, J, Stuchlíková, H, Bakardjieva, S, Hruška, K, Fejfar, A, Kočka, J
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Crystal structure
High resolution electron microscopy
Nanocomposites
Nanoelectronics
Nanomaterials
Nanostructure
Nanowires
Silicon
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Summary:Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles on glass at temperatures as low as 250 °C. High resolution electron microscopy and micro-Raman spectroscopy have been used to study the crystal structure and the growth mechanism of individual Si nanoneedles. The H(2) dilution of the SiH(4) plasma working gas has caused the formation of extremely sharp nanoneedle tips that in some cases do not contain a catalytic particle at the end.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/21/41/415604