Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to th...

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Bibliographic Details
Published in:Semiconductor science and technology 2010-09, Vol.25 (9), p.095005-095005
Main Authors: Wittmann, B, Danilov, S N, Bel'kov, V V, Tarasenko, S A, Novik, E G, Buhmann, H, Brüne, C, Molenkamp, L W, Kvon, Z D, Mikhailov, N N, Dvoretsky, S A, Vinh, N Q, van der Meer, A F G, Murdin, B, Ganichev, S D
Format: Article
Language:English
Subjects:
Direct current
Mathematical models
Orientation
Photocurrent
Photoelectric effect
Polarization
Quantum wells
Semiconductors
Wavelengths
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Summary:We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/25/9/095005