High performance nonvolatile memory using SiO2/SiOx/SiOxNy stack on excimer laser-annealed polysilicon and the effect of blocking thickness on operation voltage

Silicon-rich SiOx material is a good charge storage candidate for memory applications that promise a large memory window and low operation voltage. Nonvolatile memory (NVM) devices fabricated on excimer laser-annealed polysilicon using SiO2/SiOx/SiOxNy (OOxOn) structure are investigated with SiO2 bl...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2010-02, Vol.43 (7), p.075101-075101
Main Authors: Van Duy, Nguyen, Jung, Sungwook, Kim, Kwangryul, Son, Dang Ngoc, Nga, Nguyen Thanh, Cho, Jaehyun, Choi, Byoungdeog, Yi, Junsin
Format: Article
Language:English
Subjects:
Applied sciences
Charge
Defects
Design. Technologies. Operation analysis. Testing
Devices
Electric potential
Electronics
Exact sciences and technology
Excimers
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon dioxide
Storage and reproduction of information
Threshold voltage
Voltage
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Summary:Silicon-rich SiOx material is a good charge storage candidate for memory applications that promise a large memory window and low operation voltage. Nonvolatile memory (NVM) devices fabricated on excimer laser-annealed polysilicon using SiO2/SiOx/SiOxNy (OOxOn) structure are investigated with SiO2 blocking thicknesses changing from 15 to 20 to 30 nm. The Si-rich SiOx material exposed numerous non-bridging oxygen hole-centre defect sources and a rich silicon phase in the base material. These defects, as well as amorphous silicon clusters existing in the SiOx layer, enhance the charge storage capacity of the device. Retention properties were ensured by 3.2 nm SiOxNy tunnelling layer growth via N2O plasma-assisted oxynitridation. NVM characteristics showed a retention exceeding 85% of the threshold voltage shift after 104 s and greater than 70% after 10 years. Depending on the blocking thickness of 15, 20 or 30 nm, operating voltages varied from plus or minus 9 to plus or minus 13 V at a programming/erasing duration of only 1 ms. These excellent operating properties of the OOxOn structure make it a potential competitor among the new generation of memory structures on glass.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/43/7/075101