Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 x 1 interface from Si KLV Auger spectroscopy

An analysis of the differences observed between the Si KLV Auger spectra of the Si/Ge(001)-2 X 1 interface and pure Si indicates that the electronic structure of the interface is characterized by a reduction in the local p DOS at the Si sites and a transfer of p valence charge from Si to Ge. As a re...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2010-03, Vol.22 (8), p.085006-085006
Main Authors: UNSWORTH, P, WEIGHTMAN, P
Format: Article
Language:English
Subjects:
Auger spectroscopy
Augers
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Density of states
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Germanium
Physics
Screening
Silicon
Spectra
Thin films and multilayers
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Summary:An analysis of the differences observed between the Si KLV Auger spectra of the Si/Ge(001)-2 X 1 interface and pure Si indicates that the electronic structure of the interface is characterized by a reduction in the local p DOS at the Si sites and a transfer of p valence charge from Si to Ge. As a result, the screening of core-ionized Si sites at the interface is significantly shifted towards s screening compared with the situation for pure Si. It is possible that there is an increase in the on-site electron correlation energy, UP, for Si sites at the interface as compared with pure Si.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/22/8/085006