Metal–insulator–semiconductor–insulator–metal structured titanium dioxide ultraviolet photodetector

Titanium dioxide (TiO 2 ) thin films were prepared by an atomic layer deposition technique and a metal–insulator–semiconductor–insulator–metal structured ultraviolet photodetector was fabricated from the TiO 2 thin films. Meanwhile, a metal–semiconductor–metal structured photodetector was also fabri...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2010-02, Vol.43 (4), p.045102-045102
Main Authors: Wang, W J, Shan, C X, Zhu, H, Ma, F Y, Shen, D Z, Fan, X W, Choy, K L
Format: Article
Language:English
Subjects:
Applied sciences
Atomic structure
Carriers
Compound structure devices
Deposition
Electronics
Exact sciences and technology
Insulation
Optoelectronic devices
Photodetectors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin films
Titanium dioxide
Ultraviolet
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Titanium dioxide (TiO 2 ) thin films were prepared by an atomic layer deposition technique and a metal–insulator–semiconductor–insulator–metal structured ultraviolet photodetector was fabricated from the TiO 2 thin films. Meanwhile, a metal–semiconductor–metal structured photodetector was also fabricated under the same condition for comparison. By measuring their photoresponse properties, it was found that the existence of an insulation layer is effective in improving the photodetector's responsivity. The mechanism for the improvement has been attributed to the carrier multiplication occurring in the insulation layer under a high electric field.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/43/4/045102