Thick homoepitaxial GaN with low carrier concentration for high blocking voltage

• Published in: Journal of crystal growth 2010-09, Vol.312 (18), p.2616-2619
• Main Authors: Freitas, J.A., Mastro, M.A., Imhoff, E.A., Tadjer, M.J., Eddy, C.R., Kub, F.J.
• Format: Article
• Language: English
• Subjects: A1. Characterization; A1. Impurities; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconductors III-V materials; Carrier density; Doping; Electric potential; Gallium nitrides; High voltages; Low concentrations; Secondary ion mass spectrometry; Thick films; Voltage
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.04.022

High voltage GaN Schottky diodes require a thick blocking layer with an exceptionally low carrier concentration. To this aim, a metal organic chemical vapor deposition process was developed to create a (14 μm) thick stress-free homoepitaxial GaN film. Low temperature photoluminescence measurements are consistent with low donor background and low concentration of deep compensating centers. Capacitance–voltage measurements performed at 30 °C verified a low level of about 2×10 15 cm −3 of n-type free carriers (unintentional doping), which enabled a breakdown voltage of about 500 V. A secondary ion mass spectrometry depth profile confirms the low concentration of background impurities and X-ray diffraction extracted a low dislocation density in the film. These results indicate that thick GaN films can be deposited with free carrier concentrations sufficiently low to enable high voltage rectifiers for power switching applications.