Domain wall resistance in epitaxial Fe wires

We studied the magnetoresistance behavior of epitaxial Fe wires grown on GaAs(110) with varying widths at room temperature. Single nanowires show a wire width (w) dependence of the coercive field, which increases with 1/w for decreasing wire widths. This enables the pinning of a single domain wall i...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2011-04, Vol.323 (7), p.1027-1030
Main Authors: Hassel, C., Römer, F.M., Reckers, N., Kronast, F., Dumpich, G., Lindner, J.
Format: Article
Language:English
Subjects:
Anisotropy
Coercive force
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Domain wall
Domain wall resistance
Domain walls
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Iron
Magnetic properties and materials
Magnetic properties of nanostructures
Magnetoresistance
Magnetoresistivity
Nanocrystalline materials
Nanowires
Physics
Synchrotron radiation
Wire
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Summary:We studied the magnetoresistance behavior of epitaxial Fe wires grown on GaAs(110) with varying widths at room temperature. Single nanowires show a wire width (w) dependence of the coercive field, which increases with 1/w for decreasing wire widths. This enables the pinning of a single domain wall in the connection area of two wires with different widths. Magnetoresistance measurements of such wire structures clearly reveal resistance contributions arising from a domain wall. The presence of the domain wall is proven by photoemission electron-microscopy with synchrotron radiation. Moreover, micromagnetic simulations are performed to determine the spin orientations, especially within the domain wall. This permits us to calculate the anisotropic magnetoresistance caused by the domain wall. Taking this into account, we determine the intrinsic domain wall resistance, for which we found a positive value of 0.2%, in agreement with theoretical predictions. ► Magnetoresistance of epitaxial Fe wires is studied. ► Pinning of a single domain wall at constriction. ► Detection of domain wall by resistance and XPEEM measurements. ► AMR contribution calculated by micromagnetic simulations. ► Positive intrinsic domain wall resistance in agreement with theory.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2010.12.012