The feeble role of oxygen vacancies in magnetic coupling in ZnO based dilute magnetic semiconductors

The role of the oxygen vacancy (V(O)) as the dominant defect in ZnO in magnetic interactions of ZnO based dilute magnetic semiconductors (DMSs) was examined in detail using density functional theory. It was found that V(O) does not lead to a thermally activated carrier mediated magnetism or form mag...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Condensed matter 2010-12, Vol.22 (48), p.486003-486003
Main Authors: Assadi, M H N, Zhang, Y B, Li, S
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Exchange and superexchange interactions
Magnetic properties and materials
Magnetic semiconductors
Magnetically ordered materials: other intrinsic properties
Methods of electronic structure calculations
Physics
Studies of specific magnetic materials
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The role of the oxygen vacancy (V(O)) as the dominant defect in ZnO in magnetic interactions of ZnO based dilute magnetic semiconductors (DMSs) was examined in detail using density functional theory. It was found that V(O) does not lead to a thermally activated carrier mediated magnetism or form magnetic centers in the ZnO lattice. However, neutral V(O) may facilitate the ferromagnetism, but has a limited influence on the original antiferromagnetic coupling of the magnetic ions in oxygen stoichiometric ZnO DMSs. As a result, the ferromagnetism observed in previous experiments should be attributed to other defects such as hydrogen contamination or zinc interstitials.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/22/48/486003