Direct measurement of the hole-nuclear spin interaction in single InP/GaInP quantum dots using photoluminescence spectroscopy

We measure the hyperfine interaction of the valence band hole with nuclear spins in single InP/GaInP semiconductor quantum dots. Detection of photoluminescence (PL) of both "bright" and "dark" excitons enables direct measurement of the Overhauser shift of states with the same ele...

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Bibliographic Details
Published in:Physical review letters 2011-01, Vol.106 (2), p.027402-027402, Article 027402
Main Authors: Chekhovich, E A, Krysa, A B, Skolnick, M S, Tartakovskii, A I
Format: Article
Language:English
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Summary:We measure the hyperfine interaction of the valence band hole with nuclear spins in single InP/GaInP semiconductor quantum dots. Detection of photoluminescence (PL) of both "bright" and "dark" excitons enables direct measurement of the Overhauser shift of states with the same electron but opposite hole spin projections. We find that the hole hyperfine constant is ≈11% of that of the electron and has the opposite sign. By measuring the degree of circular polarization of the PL, an upper limit to the contribution of the heavy-light hole mixing to the measured value of the hole hyperfine constant is deduced. Our results imply that environment-independent hole spins are not realizable in III-V semiconductor, a result important for solid-state quantum information processing using hole spin qubits.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.106.027402