Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps

We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen...

Full description

Saved in:
Bibliographic Details
Published in:Nanotechnology 2011-05, Vol.22 (20), p.205204-205204
Main Authors: Park, Woojin, Jo, Gunho, Hong, Woong-Ki, Yoon, Jongwon, Choe, Minhyeok, Lee, Sangchul, Ji, Yongsung, Kim, Geunjin, Kahng, Yung Ho, Lee, Kwanghee, Wang, Deli, Lee, Takhee
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/22/20/205204