GeSn p-i-n photodetector for all telecommunication bands detection

Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1...

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Bibliographic Details
Published in:Optics express 2011-03, Vol.19 (7), p.6400-6405
Main Authors: Su, Shaojian, Cheng, Buwen, Xue, Chunlai, Wang, Wei, Cao, Quan, Xue, Haiyun, Hu, Weixuan, Zhang, Guangze, Zuo, Yuhua, Wang, Qiming
Format: Article
Language:English
Subjects:
Equipment Design
Equipment Failure Analysis
Germanium - chemistry
Light
Photometry - instrumentation
Semiconductors
Telecommunications - instrumentation
Tin - chemistry
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Summary:Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.19.006400